IRL1104 mosfet equivalent, hexfet power mosfet.
125 150 175
V (B R )D SS tp
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to a.
q
D
VDSS = 40V
G S
RDS(on) = 0.008Ω ID = 104A
Fifth Generation HEXFET ® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with .
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